Publication:

Study of Emission and Capture Processes in Semi-vertical GaN-on-Si Trench-MOSFETs

Date

2020
Proceedings Paper
https://doi.org/10.1109/ASDAM50306.2020.9393836
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dc.contributor.authorDrobny, J.
dc.contributor.authorMarek, J.
dc.contributor.authorKosa, A.
dc.contributor.authorGeens, Karen
dc.contributor.authorBorga, Matteo
dc.contributor.authorLiang, Hu
dc.contributor.authorYou, Shuzhen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorStuchlikova, L.
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidextMarek, J.::0000-0001-5612-430X
dc.contributor.orcidextStuchlikova, L.::0000-0003-1116-2390
dc.contributor.orcidimecGeens, K.::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, S.::0000-0001-6632-6239
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2024-11-25T11:04:44Z
dc.date.available2023-06-20T10:38:00Z
dc.date.available2024-11-25T11:04:44Z
dc.date.issued2020
dc.identifier.doi10.1109/ASDAM50306.2020.9393836
dc.identifier.eisbn978-1-7281-9776-0
dc.identifier.issn2475-2916
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41992
dc.publisherIEEE
dc.source.beginpage123
dc.source.conference13th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)
dc.source.conferencedateOCT 11-14, 2020
dc.source.conferencelocationSmolenice, Slovakia
dc.source.endpage126
dc.source.journalN/A
dc.source.numberofpages4
dc.title

Study of Emission and Capture Processes in Semi-vertical GaN-on-Si Trench-MOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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