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Reliability assessment of AlGaN/GaN Schottky barrier diodes under ON-state stress

Date

2020
Journal article
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dc.contributor.authorAcurio Mendez, Eliana
dc.contributor.authorTrojman, Lionel
dc.contributor.authorCrupi, Felice
dc.contributor.authorMoposita,
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-28T20:09:01Z
dc.date.available2021-10-28T20:09:01Z
dc.date.issued2020
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34590
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8970266
dc.source.beginpage167
dc.source.endpage171
dc.source.issue1
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.volume20
dc.title

Reliability assessment of AlGaN/GaN Schottky barrier diodes under ON-state stress

dc.typeJournal article
dspace.entity.typePublication
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