Publication:

AlGaN/GaN power Schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate

Date

2016
Proceedings Paper
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dc.contributor.authorLenci, Silvia
dc.contributor.authorHu, Jie
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-23T12:06:55Z
dc.date.available2021-10-23T12:06:55Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26889
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7520785
dc.source.beginpage91
dc.source.conference28th International Symposium on Power Semiconductor Devices and ICs - ISPSD
dc.source.conferencedate12/06/2016
dc.source.conferencelocationPrague Czech Republic
dc.source.endpage94
dc.title

AlGaN/GaN power Schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate

dc.typeProceedings paper
dspace.entity.typePublication
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