Publication:

Paramagnetic oxide traps in Sc2O3-passivated (1 0 0) Ge/HfO2 stacks

Date

2015
Journal article
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dc.contributor.authorStesmans, Andre
dc.contributor.authorIacovo, S.
dc.contributor.authorCott, Daire
dc.contributor.authorThean, Aaron
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorSioncke, Sonja
dc.contributor.authorAfanas'ev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorArimura, Hiroaki
dc.date.accessioned2021-10-22T23:08:30Z
dc.date.available2021-10-22T23:08:30Z
dc.date.issued2015
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25941
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0167931715002968
dc.source.beginpage180
dc.source.endpage183
dc.source.journalMicroelectronic Engineering
dc.source.volume147
dc.title

Paramagnetic oxide traps in Sc2O3-passivated (1 0 0) Ge/HfO2 stacks

dc.typeJournal article
dspace.entity.typePublication
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