Publication:

Ultra-Fast Positive Gate Bias Stress ( 100ns) to Understand the Hole Injection in Power p-GaN HEMTs

Date

2023
Proceedings Paper
https://doi.org/10.1109/ispsd
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dc.contributor.authorHuang, Zhen-Hong
dc.contributor.authorLin, Wei-Syuan
dc.contributor.authorLo, Ting-Chun
dc.contributor.authorTang, Shun-Wei
dc.contributor.authorChen, Szu-Chia
dc.contributor.authorWellekens, Dirk
dc.contributor.authorBorga, Matteo
dc.contributor.authorPosthuma, Niels
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorWu, Tian-Li
dc.date.accessioned2026-03-16T13:30:27Z
dc.date.available2026-03-16T13:30:27Z
dc.date.createdwos2025-12-27
dc.date.issued2023
dc.description.abstractUltra-fast positive gate bias stress (<100ns) in p-GaN HEMTs is reported for the first time to investigate the hole injection/trapping phenomena in power p-GaN HEMTs, including the analysis from the time-dependent TCAD simulations. The results indicate that the negative threshold voltage (VTH) shift caused by the hole injection and trapping can be minimized under the ultra-fast positive gate bias, suggesting that p-GaN power HEMTs are promising for the fast turn-on operation that can be immune to PBTI instability.
dc.description.wosFundingTextThis work was supported by the "Center for the Semiconductor Technology Research" from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan, by the National Science and Technology Council (NSTC), Taiwan, under Grant 111-2634-F-A49-008, 111-2622-8-A49-018- SB and the Young Scholar Fellowship Program under Grant 112-2636-E-A49-005.
dc.identifier.doi10.1109/ispsd
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/58838
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherIEEE
dc.source.beginpage139
dc.source.conference35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
dc.source.conferencedate2023-05-28
dc.source.conferencelocationHong Kong
dc.source.endpage142
dc.source.journal2023 35TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, ISPSD
dc.source.numberofpages4
dc.subject.keywordsV-TH
dc.title

Ultra-Fast Positive Gate Bias Stress ( 100ns) to Understand the Hole Injection in Power p-GaN HEMTs

dc.typeProceedings paper
dspace.entity.typePublication
imec.internal.crawledAt2025-12-29
imec.internal.sourcecrawler
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