Characterization of interstitial related defects in p-silicon substrates by homoepitaxial

dc.contributor.author	Schmolke, R.
dc.contributor.author	Angelberger, W.
dc.contributor.author	von Ammon, W.
dc.contributor.author	Bender, Hugo
dc.contributor.imecauthor	Bender, Hugo
dc.date.accessioned	2021-10-14T17:46:13Z
dc.date.available	2021-10-14T17:46:13Z
dc.date.issued	2001
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/5635
dc.source.beginpage	231
dc.source.conference	GADEST 2001 - Proceedings of the 9th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology;
dc.source.conferencelocation
dc.title	Characterization of interstitial related defects in p-silicon substrates by homoepitaxial
dc.type	Proceedings paper
dspace.entity.type	Publication
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