Current mirror designed with GAA nanosheet MOSFETs from room temperature to 200 degrees C

dc.contributor.author	Perina, Welder F.
dc.contributor.author	Martino, Joao Antonio
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Veloso, Anabela
dc.contributor.author	Der Agopian, Paula Ghedini
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.imecauthor	Veloso, Anabela
dc.contributor.orcidext	Perina, Welder F.::0000-0001-6205-351X
dc.contributor.orcidext	Martino, Joao Antonio::0000-0001-8121-6513
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2022-03-03T14:04:13Z
dc.date.available	2021-11-02T15:58:16Z
dc.date.available	2022-03-03T14:04:13Z
dc.date.issued	2021
dc.identifier.doi	10.1088/1361-6641/ac1310
dc.identifier.issn	0268-1242
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/37671
dc.publisher	IOP PUBLISHING LTD
dc.source.issue	9
dc.source.journal	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
dc.source.numberofpages	10
dc.source.volume	36
dc.subject.keywords	NANOWIRE MOSFETS
dc.subject.keywords	GATE
dc.title	Current mirror designed with GAA nanosheet MOSFETs from room temperature to 200 degrees C
dc.type	Journal article
dspace.entity.type	Publication
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