Publication:

Impact of ALD grown passivation layers on silicon nitride based integrated optic devices for very-near-infrared wavelengths

Date

2014-03
Journal article
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dc.contributor.authorKhanna, Amit
dc.contributor.authorSubramanian, Ananth
dc.contributor.authorHayrinen, Markus
dc.contributor.authorSelvaraja, Shankar
dc.contributor.authorVerheyen, Peter
dc.contributor.authorVan Thourhout, Dries
dc.contributor.authorHonkanen, Seppo
dc.contributor.authorLipsanen, Harri
dc.contributor.authorBaets, Roel
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorVan Thourhout, Dries
dc.contributor.imecauthorBaets, Roel
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.contributor.orcidimecBaets, Roel::0000-0003-1266-1319
dc.date.accessioned2021-10-22T02:36:27Z
dc.date.available2021-10-22T02:36:27Z
dc.date.embargo9999-12-31
dc.date.issued2014-03
dc.identifier.issn1094-4087
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24056
dc.identifier.urlhttp://www.opticsinfobase.org/oe/abstract.cfm?uri=oe-22-5-5684
dc.source.beginpage5684
dc.source.endpage5692
dc.source.issue5
dc.source.journalOptics Express
dc.source.volume22
dc.title

Impact of ALD grown passivation layers on silicon nitride based integrated optic devices for very-near-infrared wavelengths

dc.typeJournal article
dspace.entity.typePublication
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