Spin-orbit interction in a 2DEG in a InAs/AlSb quantum tunnel well with gate-controlled electron density

dc.contributor.author	Heida, J. P.
dc.contributor.author	van Wees, B. J.
dc.contributor.author	Klapwijk, T. M.
dc.contributor.author	Borghs, Gustaaf
dc.contributor.imecauthor	Borghs, Gustaaf
dc.date.accessioned	2021-09-29T14:32:48Z
dc.date.available	2021-09-29T14:32:48Z
dc.date.issued	1996
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/1251
dc.source.beginpage	2467
dc.source.conference	Proceedings of the 23rd International Conference on the Physics of Semiconductors; 21-26 July 1996; Berlin, Germany.
dc.source.conferencelocation
dc.source.endpage	70
dc.title	Spin-orbit interction in a 2DEG in a InAs/AlSb quantum tunnel well with gate-controlled electron density
dc.type	Proceedings paper
dspace.entity.type	Publication
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