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Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition
Publication:
Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition
Date
2012
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
You, Shuzhen
;
Decoutere, Stefaan
;
Nguyen, Duy
;
Van Huylenbroeck, Stefaan
;
Sibaja-Hernandez, Arturo
;
Venegas, Rafael
;
Loo, Roger
;
De Meyer, Kristin
Journal
Thin Solid Films
Abstract
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Acq. date: 2025-12-08
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2026
since deposited on 2021-10-20
1
last month
1
last week
Acq. date: 2025-12-08
Citations