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On the use of indium and gallium as p-type dopants in Si 0.1 μm MOSFETs
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On the use of indium and gallium as p-type dopants in Si 0.1 μm MOSFETs
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Date
1995
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Biesemans, Serge
;
Kubicek, Stefan
;
Van Laer, Joris
;
Loosen, Fred
;
Geenen, Luc
;
Maex, Karen
;
De Meyer, Kristin
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1975
since deposited on 2021-09-29
2
last month
1
last week
Acq. date: 2025-12-13
Citations
Metrics
Views
1975
since deposited on 2021-09-29
2
last month
1
last week
Acq. date: 2025-12-13
Citations