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A new method to fabricate Ge nanowires: selective lateral etching of GeSn:P-Ge multi-stacks
Publication:
A new method to fabricate Ge nanowires: selective lateral etching of GeSn:P-Ge multi-stacks
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Date
2018
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Porret, Clément
;
Vohra, Anurag
;
Sebaai, Farid
;
Douhard, Bastien
;
Hikavyy, Andriy
;
Loo, Roger
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1910
since deposited on 2021-10-26
Acq. date: 2025-12-15
Citations
Metrics
Views
1910
since deposited on 2021-10-26
Acq. date: 2025-12-15
Citations