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High quality GaN based structures grown on large size Si(111) substrates using interlayers by MOVPE

Date

2007
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dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorDegroote, Stefan
dc.contributor.authorDerluyn, Joff
dc.contributor.authorSijmus, Bram
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.date.accessioned2021-10-16T15:15:54Z
dc.date.available2021-10-16T15:15:54Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11848
dc.source.conferenceE-MRS Spring Meeting Symposium F: Novel Gain Materials and Devices Based on III-N-V Compounds
dc.source.conferencedate27/05/2007
dc.source.conferencelocationStrassbourg France
dc.title

High quality GaN based structures grown on large size Si(111) substrates using interlayers by MOVPE

dc.typeOral presentation
dspace.entity.typePublication
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