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Properties of shallowly etched second order grating in silicon-on-insulator (SOI) waveguide

Date

2013-05
Proceedings Paper
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dc.contributor.authorLi, Lianyan
dc.contributor.authorLi, YanLu
dc.contributor.authorMorthier, Geert
dc.contributor.imecauthorLi, YanLu
dc.contributor.imecauthorMorthier, Geert
dc.contributor.orcidimecLi, YanLu::0000-0003-3440-1972
dc.contributor.orcidimecMorthier, Geert::0000-0003-1819-6489
dc.date.accessioned2021-10-21T09:18:16Z
dc.date.available2021-10-21T09:18:16Z
dc.date.embargo9999-12-31
dc.date.issued2013-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22680
dc.source.conferenceProceedings of the IEEE Photonics Benelux Annual Workshop
dc.source.conferencedate3/05/2013
dc.source.conferencelocationBrussels Belgium
dc.title

Properties of shallowly etched second order grating in silicon-on-insulator (SOI) waveguide

dc.typeProceedings paper
dspace.entity.typePublication
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