Publication:
Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures
| dc.contributor.author | Tang, Hongwei | |
| dc.contributor.author | Belmonte, Attilio | |
| dc.contributor.author | Lin, Dennis | |
| dc.contributor.author | Zhao, Ying | |
| dc.contributor.author | Beckers, Arnout | |
| dc.contributor.author | Verdonck, Patrick | |
| dc.contributor.author | Dekkers, Hendrik | |
| dc.contributor.author | Subhechha, Subhali | |
| dc.contributor.author | van Setten, Michiel | |
| dc.contributor.author | Chen, Zhuo | |
| dc.contributor.author | Kar, Gouri Sankar | |
| dc.contributor.author | Van Houdt, Jan | |
| dc.contributor.author | Afanasiev, Valeri | |
| dc.contributor.imecauthor | Tang, Hongwei | |
| dc.contributor.imecauthor | Belmonte, Attilio | |
| dc.contributor.imecauthor | Lin, Dennis | |
| dc.contributor.imecauthor | Zhao, Ying | |
| dc.contributor.imecauthor | Beckers, Arnout | |
| dc.contributor.imecauthor | Verdonck, Patrick | |
| dc.contributor.imecauthor | Dekkers, Hendrik | |
| dc.contributor.imecauthor | Subhechha, Subhali | |
| dc.contributor.imecauthor | van Setten, Michiel | |
| dc.contributor.imecauthor | Chen, Zhuo | |
| dc.contributor.imecauthor | Kar, Gouri Sankar | |
| dc.contributor.imecauthor | Van Houdt, Jan | |
| dc.contributor.imecauthor | Afanas'ev, Valeri | |
| dc.contributor.orcidimec | Tang, Hongwei::0009-0005-1345-5551 | |
| dc.contributor.orcidimec | Belmonte, Attilio::0000-0002-3947-1948 | |
| dc.contributor.orcidimec | Lin, Dennis::0000-0002-1577-6050 | |
| dc.contributor.orcidimec | Zhao, Ying::0000-0002-7758-5655 | |
| dc.contributor.orcidimec | Beckers, Arnout::0000-0003-3663-0824 | |
| dc.contributor.orcidimec | Verdonck, Patrick::0000-0003-2454-0602 | |
| dc.contributor.orcidimec | Subhechha, Subhali::0000-0002-1960-5136 | |
| dc.contributor.orcidimec | van Setten, Michiel::0000-0003-0557-5260 | |
| dc.contributor.orcidimec | Chen, Zhuo::0000-0002-7407-8885 | |
| dc.contributor.orcidimec | Van Houdt, Jan::0000-0003-1381-6925 | |
| dc.date.accessioned | 2025-06-22T03:55:04Z | |
| dc.date.available | 2025-06-22T03:55:04Z | |
| dc.date.issued | 2025-JUN 9 | |
| dc.description.wosFundingText | The authors would like to thank the support of imec's Industrial Partners in the Active Memory Program. This work has been enabled in part by the NanoIC pilot line. The acquisition and operation are jointly funded by the Chips Joint Undertaking, through the European Union's Digital Europe (No. 101183266) and Horizon Europe programs (No. 101183277), as well as by the following participating states: Belgium (Flanders), France, Germany, Finland, Ireland, and Romania. For more information, visit nanoic-project.eu. | |
| dc.identifier.doi | 10.1063/5.0271394 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/45827 | |
| dc.publisher | AIP Publishing | |
| dc.source.beginpage | 232108-1 | |
| dc.source.endpage | 232108-6 | |
| dc.source.issue | 23 | |
| dc.source.journal | APPLIED PHYSICS LETTERS | |
| dc.source.numberofpages | 6 | |
| dc.source.volume | 126 | |
| dc.subject.keywords | MOBILITY EDGES | |
| dc.subject.keywords | DEPENDENCE | |
| dc.subject.keywords | DEVICES | |
| dc.title | Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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