Publication:

Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures

Date

2025-JUN 9
Journal article
https://doi.org/10.1063/5.0271394
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dc.contributor.authorTang, Hongwei
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorLin, Dennis
dc.contributor.authorZhao, Ying
dc.contributor.authorBeckers, Arnout
dc.contributor.authorVerdonck, Patrick
dc.contributor.authorDekkers, Hendrik
dc.contributor.authorSubhechha, Subhali
dc.contributor.authorvan Setten, Michiel
dc.contributor.authorChen, Zhuo
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorAfanasiev, Valeri
dc.contributor.imecauthorTang, Hongwei
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorZhao, Ying
dc.contributor.imecauthorBeckers, Arnout
dc.contributor.imecauthorVerdonck, Patrick
dc.contributor.imecauthorDekkers, Hendrik
dc.contributor.imecauthorSubhechha, Subhali
dc.contributor.imecauthorvan Setten, Michiel
dc.contributor.imecauthorChen, Zhuo
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorAfanas'ev, Valeri
dc.contributor.orcidimecTang, Hongwei::0009-0005-1345-5551
dc.contributor.orcidimecBelmonte, Attilio::0000-0002-3947-1948
dc.contributor.orcidimecLin, Dennis::0000-0002-1577-6050
dc.contributor.orcidimecZhao, Ying::0000-0002-7758-5655
dc.contributor.orcidimecBeckers, Arnout::0000-0003-3663-0824
dc.contributor.orcidimecVerdonck, Patrick::0000-0003-2454-0602
dc.contributor.orcidimecSubhechha, Subhali::0000-0002-1960-5136
dc.contributor.orcidimecvan Setten, Michiel::0000-0003-0557-5260
dc.contributor.orcidimecChen, Zhuo::0000-0002-7407-8885
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2025-06-22T03:55:04Z
dc.date.available2025-06-22T03:55:04Z
dc.date.issued2025-JUN 9
dc.description.wosFundingTextThe authors would like to thank the support of imec's Industrial Partners in the Active Memory Program. This work has been enabled in part by the NanoIC pilot line. The acquisition and operation are jointly funded by the Chips Joint Undertaking, through the European Union's Digital Europe (No. 101183266) and Horizon Europe programs (No. 101183277), as well as by the following participating states: Belgium (Flanders), France, Germany, Finland, Ireland, and Romania. For more information, visit nanoic-project.eu.
dc.identifier.doi10.1063/5.0271394
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45827
dc.publisherAIP Publishing
dc.source.beginpage232108-1
dc.source.endpage232108-6
dc.source.issue23
dc.source.journalAPPLIED PHYSICS LETTERS
dc.source.numberofpages6
dc.source.volume126
dc.subject.keywordsMOBILITY EDGES
dc.subject.keywordsDEPENDENCE
dc.subject.keywordsDEVICES
dc.title

Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures

dc.typeJournal article
dspace.entity.typePublication
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