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Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures

Date

1999
Journal article
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dc.contributor.authorPokatilov, E. P.
dc.contributor.authorFomin, V. M.
dc.contributor.authorBalaban, S. N.
dc.contributor.authorGladilin, V. N.
dc.contributor.authorKlimin, S. N.
dc.contributor.authorDevreese, J. T.
dc.contributor.authorMagnus, Wim
dc.contributor.authorSchoenmaker, Wim
dc.contributor.authorCollaert, Nadine
dc.contributor.authorVan Rossum, Marc
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorMagnus, Wim
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-14T11:34:24Z
dc.date.available2021-10-14T11:34:24Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3757
dc.source.beginpage6625
dc.source.endpage6631
dc.source.issue9
dc.source.journalJ. Appl. Phys.
dc.source.volume85
dc.title

Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures

dc.typeJournal article
dspace.entity.typePublication
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