Temperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability

dc.contributor.author	Degraeve, Robin
dc.contributor.author	Pangon, Nadège
dc.contributor.author	Kaczer, Ben
dc.contributor.author	Nigam, Tanya
dc.contributor.author	Groeseneken, Guido
dc.contributor.author	Naem, Abdalla
dc.contributor.imecauthor	Degraeve, Robin
dc.contributor.imecauthor	Kaczer, Ben
dc.contributor.imecauthor	Groeseneken, Guido
dc.contributor.orcidimec	Kaczer, Ben::0000-0002-1484-4007
dc.date.accessioned	2021-10-06T11:01:06Z
dc.date.available	2021-10-06T11:01:06Z
dc.date.issued	1999
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/3397
dc.source.beginpage	59
dc.source.conference	Symposium on VLSI Technology: Technical Digest; June 1999; Kyoto, Japan.
dc.source.endpage	60
dc.title	Temperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability
dc.type	Proceedings paper
dspace.entity.type	Publication
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