Publication:

Passivation of poly-Si channel vertical NAND devices du high pressure annealing

Date

2016-05
Proceedings Paper
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dc.contributor.authorBreuil, Laurent
dc.contributor.authorlisoni, Judit, G.
dc.contributor.authorDelhougne, Romain
dc.contributor.authorTan, Chi Lim
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorFurnemont, Arnaud
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorFurnemont, Arnaud
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecFurnemont, Arnaud::0000-0002-6378-1030
dc.date.accessioned2021-10-23T10:10:42Z
dc.date.available2021-10-23T10:10:42Z
dc.date.issued2016-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26382
dc.source.beginpage88
dc.source.conferenceInternational Memory Workshop - IMW
dc.source.conferencedate15/05/2016
dc.source.conferencelocationParis France
dc.source.endpage91
dc.title

Passivation of poly-Si channel vertical NAND devices du high pressure annealing

dc.typeProceedings paper
dspace.entity.typePublication
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