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Low-frequency and random telegraph noise performance of Ge-based and III-V devices on a Si platform

Date

2016
Proceedings Paper
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dc.contributor.authorClaeys, Cor
dc.contributor.authorAgopian, Paula
dc.contributor.authorAlian, AliReza
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorFang, Wen
dc.contributor.authorMartino, Joao
dc.contributor.authorMitard, Jerome
dc.contributor.authorNeves, Felipe
dc.contributor.authorOliveira, Alberto
dc.contributor.authorSimoen, Eddy
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-23T10:19:47Z
dc.date.available2021-10-23T10:19:47Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26458
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7998900/
dc.source.beginpage288
dc.source.conference13th IEEE International Conference on Solid-State and Integrated Circuit Technology - ICSICT
dc.source.conferencedate25/10/2016
dc.source.conferencelocationHangzhou China
dc.source.endpage293
dc.title

Low-frequency and random telegraph noise performance of Ge-based and III-V devices on a Si platform

dc.typeProceedings paper
dspace.entity.typePublication
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