Publication:

Experimental determination of the driving force for switching in TiN/a-Si/TiOx/TiN RRAM devices

Date

2019
Proceedings Paper
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dc.contributor.authorSubhechha, Subhali
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGoux, Ludovic
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorKar, Gouri Sankar
dc.contributor.imecauthorSubhechha, Subhali
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecVan Houdt, Jan::1234-1234-1234-1235
dc.date.accessioned2021-10-27T19:09:17Z
dc.date.available2021-10-27T19:09:17Z
dc.date.embargo9999-12-31
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34079
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8739684
dc.source.beginpage1
dc.source.conferenceIEEE 11th International Memory Workshop (IMW)
dc.source.conferencedate12/05/2019
dc.source.conferencelocationMonterey, CA USA
dc.source.endpage4
dc.title

Experimental determination of the driving force for switching in TiN/a-Si/TiOx/TiN RRAM devices

dc.typeProceedings paper
dspace.entity.typePublication
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