Publication:

Micro-transfer printing of InP SOAs on advanced silicon photonics platform for C-band pre-amplified receivers

Date

2025
Proceedings Paper
https://doi.org/10.1117/12.3041159
Simple item page Full metadata Statistics
 
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-6091-7350
cris.virtual.orcid0000-0002-4952-5014
cris.virtual.orcid0000-0001-6608-9990
cris.virtual.orcid0000-0002-4667-5092
cris.virtualsource.department5e3ff12a-1a79-49bc-a902-f8a761fc4a75
cris.virtualsource.department397e5061-fc02-4728-9e02-d4f5136d30b4
cris.virtualsource.department7897aa7a-0c43-4929-b5ef-9f5606dd37c6
cris.virtualsource.departmentb32be2a6-49e5-4859-8aac-84fd4f5bec8e
cris.virtualsource.orcid5e3ff12a-1a79-49bc-a902-f8a761fc4a75
cris.virtualsource.orcid397e5061-fc02-4728-9e02-d4f5136d30b4
cris.virtualsource.orcid7897aa7a-0c43-4929-b5ef-9f5606dd37c6
cris.virtualsource.orcidb32be2a6-49e5-4859-8aac-84fd4f5bec8e
dc.contributor.authorQin, Senbiao
dc.contributor.authorSoltanian, Emad
dc.contributor.authorRamirez, Joan
dc.contributor.authorNeel, Delphine
dc.contributor.authorVaissiere, Nicolas
dc.contributor.authorDecobert, Jean
dc.contributor.authorZhang, Jing
dc.contributor.authorRoelkens, Gunther
dc.contributor.imecauthorQin, Senbiao
dc.contributor.imecauthorSoltanian, Emadreza
dc.contributor.imecauthorZhang, Jing
dc.contributor.imecauthorRoelkens, Gunther
dc.contributor.orcidimecQin, Senbiao::0000-0002-4952-5014
dc.contributor.orcidimecRoelkens, Gunther::0000-0002-4667-5092
dc.date.accessioned2025-05-25T05:34:00Z
dc.date.available2025-05-25T05:34:00Z
dc.date.issued2025
dc.description.abstractWe present a C-band pre-amplified receiver on an advanced silicon photonics platform, consisting of an indium phosphide semiconductor optical amplifier (InP SOA) integrated via micro-transfer printing (μTP), connected to a ring filter and a 50GHz germanium photodiode (Ge PD). The InP SOA provides 8.1dB small-signal gain at 1550.3nm for an injection current of 95mA. The ring filter has a 25dB extinction ratio and a 3dB bandwidth of 1.45nm to suppress the amplified spontaneous emission (ASE) noise from the SOA. In the 30 Gbps non-return-to- zero (NRZ) signal transmission experiment, the device exhibits a sensitivity of −18dBm at a bit-error rate (BER) of 10−6 for an SOA injection current of 95mA, showing a 7dB improvement compared to the reference Ge PD.
dc.description.wosFundingTextThis work was supported by the UGent BOF-GOA project Optical Network-on-Wafer and the Horizon 2020 project CALADAN.
dc.identifier.doi10.1117/12.3041159
dc.identifier.eisbn978-1-5106-8491-1
dc.identifier.isbn978-1-5106-8490-4
dc.identifier.issn0277-786X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45713
dc.publisherSPIE-INT SOC OPTICAL ENGINEERING
dc.source.beginpage133710K
dc.source.conference2025 Conference on Silicon Photonics
dc.source.conferencedate2025-03-20
dc.source.conferencelocationSan Francisco
dc.source.journalProceedings of SPIE
dc.source.numberofpages5
dc.title

Micro-transfer printing of InP SOAs on advanced silicon photonics platform for C-band pre-amplified receivers

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
133710K.pdf
Size:
3.4 MB
Format:
Adobe Portable Document Format
Description:
Published
Download
Publication available in collections:
Conference contributions