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Electrically active defects in irradiated n-Type Czochralski silicon doped with group IV impurities

Date

2004
Presentation
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dc.contributor.authorDavid, M.L.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorNeimash, V.
dc.contributor.authorKras'ko, M.
dc.contributor.authorKraitchinski, A.
dc.contributor.authorVoytovych, V.
dc.contributor.authorKabaldin, A.
dc.contributor.authorBarbot, J.F.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-15T12:59:55Z
dc.date.available2021-10-15T12:59:55Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8747
dc.source.conferenceWorkshop on Defects Relevant to Engineering Advanced Silicon-Based Devices
dc.source.conferencedate26/09/2004
dc.source.conferencelocationCatania Sicily
dc.title

Electrically active defects in irradiated n-Type Czochralski silicon doped with group IV impurities

dc.typeOral presentation
dspace.entity.typePublication
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