Publication:

Interface passivation analysis of Ge/GeO2 pMOS and nMOS with and without forming gas anneal

Date

2009
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dc.contributor.authorMartens, Koen
dc.contributor.authorBellenger, Florence
dc.contributor.authorDelabie, Annelies
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorMeuris, Marc
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-18T00:39:34Z
dc.date.available2021-10-18T00:39:34Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15836
dc.source.conference40th IEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate3/12/2009
dc.source.conferencelocationArlington, VA USA
dc.title

Interface passivation analysis of Ge/GeO2 pMOS and nMOS with and without forming gas anneal

dc.typeMeeting abstract
dspace.entity.typePublication
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