Processing factors impacting the leakage current and flicker noise of germanium p+-n junctions on silicon substrates

dc.contributor.author	Simoen, Eddy
dc.contributor.author	Sonde, Sushant
dc.contributor.author	Claeys, Cor
dc.contributor.author	Satta, Alessandra
dc.contributor.author	De Jaeger, Brice
dc.contributor.author	Todi, Ravi
dc.contributor.author	Meuris, Marc
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.imecauthor	De Jaeger, Brice
dc.contributor.imecauthor	Meuris, Marc
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimec	De Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimec	Meuris, Marc::0000-0002-9580-6810
dc.date.accessioned	2021-10-17T10:48:52Z
dc.date.available	2021-10-17T10:48:52Z
dc.date.issued	2008
dc.identifier.issn	0013-4651
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/14480
dc.source.beginpage	H145
dc.source.endpage	H150
dc.source.issue	3
dc.source.journal	Journal of the Electrochemical Society
dc.source.volume	155
dc.title	Processing factors impacting the leakage current and flicker noise of germanium p+-n junctions on silicon substrates
dc.type	Journal article
dspace.entity.type	Publication
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