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Hiqh quality Ge epitaxial layers in narrow channels on Si (001) substrates

Date

2010
Meeting abstract
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dc.contributor.authorWang, Gang
dc.contributor.authorRosseel, Erik
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-19T00:17:31Z
dc.date.available2021-10-19T00:17:31Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18333
dc.source.conferenceE-MRS Spring Meeting Symposium H: Post-Si CMOS Electronic Devices: The Role of Ge and III-V Materials
dc.source.conferencedate7/06/2010
dc.source.conferencelocationStrasbourg France
dc.title

Hiqh quality Ge epitaxial layers in narrow channels on Si (001) substrates

dc.typeMeeting abstract
dspace.entity.typePublication
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