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Chalcogenide Ovonic Threshold Switching Selector

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dc.contributor.authorZhao, Zihao
dc.contributor.authorClima, Sergiu
dc.contributor.authorGarbin, Daniele
dc.contributor.authorDegraeve, Robin
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorSong, Zhitang
dc.contributor.authorZhu, Min
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorGarbin, Daniele
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecGarbin, Daniele::0000-0002-5884-1043
dc.contributor.orcidimecDegraeve, Robin::0000-0002-4609-5573
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.accessioned2024-02-08T09:01:59Z
dc.date.available2024-01-30T17:35:24Z
dc.date.available2024-02-08T09:01:59Z
dc.date.embargo2024-01-11
dc.date.issued2024
dc.description.wosFundingTextM. Zhu acknowledges support by the National Outstanding Youth Program (62322411), the Hundred Talents Program (Chinese Academy of Sciences), and the Shanghai Rising-Star Program (21QA1410800). The financial support was provided by the Strategic Priority Research Program of the Chinese Academy of Sciences (XDB44010200).
dc.identifier.doi10.1007/s40820-023-01289-x
dc.identifier.issn2311-6706
dc.identifier.pmidMEDLINE:38206440
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43476
dc.publisherSHANGHAI JIAO TONG UNIV PRESS
dc.source.beginpageArt. 81
dc.source.endpageN/A
dc.source.issue1
dc.source.journalNANO-MICRO LETTERS
dc.source.numberofpages40
dc.source.volume16
dc.subject.keywordsPHASE-CHANGE MEMORY
dc.subject.keywordsATOMIC LAYER DEPOSITION
dc.subject.keywordsCRYSTALLIZATION KINETICS
dc.subject.keywordsELECTRICAL INSTABILITIES
dc.subject.keywordsNEGATIVE-RESISTANCE
dc.subject.keywordsVOLTAGE DRIFT
dc.subject.keywordsGENERATION
dc.subject.keywordsSE
dc.subject.keywordsSTATES
dc.subject.keywordsMODEL
dc.title

Chalcogenide Ovonic Threshold Switching Selector

dc.typeJournal article review
dspace.entity.typePublication
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