Publication:

Low-temperature homoepitaxy of silicon by electron cyclotron resonance CVD

Date

1997
Proceedings Paper
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dc.contributor.authorConrad, E.
dc.contributor.authorElstner, L.
dc.contributor.authorFuhs, W.
dc.contributor.authorHenrion, W.
dc.contributor.authorMüller, P.
dc.contributor.authorPoortmans, Jef
dc.contributor.authorSelle, B.
dc.contributor.authorZeimer, U.
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.accessioned2021-09-30T08:01:38Z
dc.date.available2021-09-30T08:01:38Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1781
dc.source.beginpage1411
dc.source.conference14th European Photovoltaic Solar Energy Conference and Exhibition. Proceedings of the International Conference
dc.source.conferencedate30/06/1997
dc.source.conferencelocationBarcelona Spain
dc.source.endpage1414
dc.title

Low-temperature homoepitaxy of silicon by electron cyclotron resonance CVD

dc.typeProceedings paper
dspace.entity.typePublication
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