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Influence of the strain-relaxation induced defect creation on the leakage current of embedded Si1-xGex source/drain junctions
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Influence of the strain-relaxation induced defect creation on the leakage current of embedded Si1-xGex source/drain junctions
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Date
2008
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Bargallo Gonzalez, Mireia
;
Simoen, Eddy
;
Vissouvanadin, B.
;
Verheyen, Peter
;
Loo, Roger
;
Claeys, Cor
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1829
since deposited on 2021-10-17
Acq. date: 2025-12-16
Citations
Metrics
Views
1829
since deposited on 2021-10-17
Acq. date: 2025-12-16
Citations