Publication:

RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si

Date

2023
Journal article
https://doi.org/10.1017/S1759078722001428
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dc.contributor.authorElKashlan, Rana Y.
dc.contributor.authorKhaled, Ahmad
dc.contributor.authorRodriguez, Raul
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorAlian, AliReza
dc.contributor.authorCollaert, Nadine
dc.contributor.authorWambacq, Piet
dc.contributor.authorParvais, Bertrand
dc.contributor.imecauthorKhaled, Ahmad
dc.contributor.imecauthorRodriguez, Raul
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorPeralagu, Uthayasankaran
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorWambacq, Piet
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorElKashlan, Rana
dc.contributor.orcidimecKhaled, Ahmad::0000-0003-2892-3176
dc.contributor.orcidimecRodriguez, Raul::0000-0002-4457-8942
dc.contributor.orcidimecPeralagu, Uthayasankaran::0000-0001-9166-4408
dc.contributor.orcidimecAlian, AliReza::0000-0003-3463-416X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecWambacq, Piet::0000-0003-4388-7257
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecSibaja-Hernandez, Arturo::0000-0002-2315-9028
dc.contributor.orcidimecElKashlan, Rana::0000-0003-0576-4344
dc.date.accessioned2024-01-11T16:32:26Z
dc.date.available2023-04-23T03:54:39Z
dc.date.available2024-01-11T16:32:26Z
dc.date.embargo2022-11-22
dc.date.issued2023
dc.identifier.doi10.1017/S1759078722001428
dc.identifier.issn1759-0787
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41482
dc.publisherCAMBRIDGE UNIV PRESS
dc.source.beginpage983
dc.source.endpage992
dc.source.issue6
dc.source.journalINTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES
dc.source.numberofpages10
dc.source.volume15
dc.subject.keywordsDISTORTION
dc.subject.keywordsAM
dc.title

RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si

dc.typeJournal article
dspace.entity.typePublication
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