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Oxide traps in MOS transistors: semi-automatic extraction of trap parameters from time dependent defect spectroscopy
Publication:
Oxide traps in MOS transistors: semi-automatic extraction of trap parameters from time dependent defect spectroscopy
Date
2010-07
Proceedings Paper
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21436.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Wagner, Paul-Jurgen
;
Grasser, Tibor
;
Reisinger, Hans
;
Kaczer, Ben
Journal
Abstract
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1941
since deposited on 2021-10-19
Acq. date: 2025-10-25
Citations
Metrics
Views
1941
since deposited on 2021-10-19
Acq. date: 2025-10-25
Citations