Publication:

Silicide engineering to boost Si tunnel FET transistor drive current

Date

2011
Journal article
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dc.contributor.authorLeonelli, Daniele
dc.contributor.authorVandooren, Anne
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVerhulst, Anne
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorLeonelli, Daniele
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-19T15:22:12Z
dc.date.available2021-10-19T15:22:12Z
dc.date.issued2011
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19272
dc.identifier.urlhttp://jjap.jsap.jp/link?JJAP/50/04DC05
dc.source.beginpage04DC05
dc.source.issue4
dc.source.journalJapanese Journal of Applied Physics
dc.source.volume50
dc.title

Silicide engineering to boost Si tunnel FET transistor drive current

dc.typeJournal article
dspace.entity.typePublication
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