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Detection, binning, and analysis of defects in a GaN-on-Si process for high brightness light emitting diodes

Date

2012
Proceedings Paper
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dc.contributor.authorHalder, Sandip
dc.contributor.authorMiller, Andy
dc.contributor.authorOsman, Haris
dc.contributor.authorDutta, Barundeb
dc.contributor.authorMani, Antonio
dc.contributor.authorJones, Chris
dc.contributor.authorMcCance, Syd
dc.contributor.authorBurkeen, Frank
dc.contributor.imecauthorHalder, Sandip
dc.contributor.imecauthorMiller, Andy
dc.contributor.imecauthorOsman, Haris
dc.contributor.imecauthorDutta, Barundeb
dc.contributor.imecauthorMani, Antonio
dc.contributor.orcidimecHalder, Sandip::0000-0002-6314-2685
dc.date.accessioned2021-10-20T11:25:51Z
dc.date.available2021-10-20T11:25:51Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20771
dc.source.beginpage106
dc.source.conference23rd Annual SEMI Advanced Semiconductor Manufacturing Conference - ASMC
dc.source.conferencedate15/05/2012
dc.source.conferencelocationSaratoga Springs, NY USA
dc.source.endpage109
dc.title

Detection, binning, and analysis of defects in a GaN-on-Si process for high brightness light emitting diodes

dc.typeProceedings paper
dspace.entity.typePublication
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