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Characterisation of 2% mismatched InGaAs layers, grown on different bufferlayers and at different growth temperatures

Date

1996
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dc.contributor.authorD'Hondt, Mark
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.date.accessioned2021-09-29T14:27:47Z
dc.date.available2021-09-29T14:27:47Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1210
dc.source.conferenceProceedings of the 8th International Conference on Metal Organic Vapour Phase Epitaxy; 9-13 June 1996; Cardiff, Wales, UK.
dc.source.conferencelocation
dc.title

Characterisation of 2% mismatched InGaAs layers, grown on different bufferlayers and at different growth temperatures

dc.typeOral presentation
dspace.entity.typePublication
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