Publication:

Reliability comparison of ISSG oxide and HTO as tunnel dielectric in 3-D–SONOS applications

Date

2013
Journal article
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dc.contributor.authorQiao, Fengying
dc.contributor.authorArreghini, Antonio
dc.contributor.authorBlomme, Pieter
dc.contributor.authorDate, Lucien
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorLiyang, Pan
dc.contributor.authorJun, Xu
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorDate, Lucien
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-21T11:09:19Z
dc.date.available2021-10-21T11:09:19Z
dc.date.issued2013
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22963
dc.source.beginpage620
dc.source.endpage622
dc.source.issue5
dc.source.journalIEEE Electron Device Letters
dc.source.volume34
dc.title

Reliability comparison of ISSG oxide and HTO as tunnel dielectric in 3-D–SONOS applications

dc.typeJournal article
dspace.entity.typePublication
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