Publication:

Selective-area metal organic vapor-phase epitaxy of InGaAs/InP heterostructures on Si for advanced CMOS devices

Date

2014
Proceedings Paper
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dc.contributor.authorMerckling, Clement
dc.contributor.authorWaldron, Niamh
dc.contributor.authorJiang, Sijia
dc.contributor.authorGuo, Weiming
dc.contributor.authorRyan, Paul
dc.contributor.authorCollaert, Nadine
dc.contributor.authorCaymax, Matty
dc.contributor.authorBarla, Kathy
dc.contributor.authorHeyns, Marc
dc.contributor.authorThean, Aaron
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-22T03:45:20Z
dc.date.available2021-10-22T03:45:20Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24245
dc.identifier.urlhttp://ecst.ecsdl.org/content/61/2/107.abstract?sid=c040df6b-cac2-42fd-a923-ce62ea40805b
dc.source.beginpage107
dc.source.conferenceDielectrics for Nanosystems 6: Materials Science, Processing, Reliability and Manufacturing
dc.source.conferencedate11/05/2014
dc.source.conferencelocationOrlando, FL USA
dc.source.endpage112
dc.title

Selective-area metal organic vapor-phase epitaxy of InGaAs/InP heterostructures on Si for advanced CMOS devices

dc.typeProceedings paper
dspace.entity.typePublication
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