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Early voltage and intrinsic voltage gain in vertical nanowire-TFETs as a function of temperature

Date

2014
Proceedings Paper
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dc.contributor.authorMartino, Marcio
dc.contributor.authorNeves Souza, Felipe
dc.contributor.authorAgopian, Paula
dc.contributor.authorMartino, Joao
dc.contributor.authorVandooren, Anne
dc.contributor.authorRooyackers, Rita
dc.contributor.authorSimoen, Eddy
dc.contributor.authorThean, Aaron
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-22T03:37:17Z
dc.date.available2021-10-22T03:37:17Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24224
dc.source.beginpage78
dc.source.conference9th International Caribbean Conference on Devices, Circuits and Systems - ICCDCS
dc.source.conferencedate2/04/2014
dc.source.conferencelocationPlaya del Carmen Mexico
dc.source.endpage81
dc.title

Early voltage and intrinsic voltage gain in vertical nanowire-TFETs as a function of temperature

dc.typeProceedings paper
dspace.entity.typePublication
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