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Evaluation of time-of-flight secondary ion mass spectrometry for metal contamination monitoring on Si wafer surfaces

Date

2000
Journal article
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dc.contributor.authorDe Witte, Hilde
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorDouglas, M.
dc.contributor.authorConard, Thierry
dc.contributor.authorKenis, Karine
dc.contributor.authorMertens, Paul
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorGijbels, Renaat
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.date.accessioned2021-10-14T12:50:43Z
dc.date.available2021-10-14T12:50:43Z
dc.date.embargo9999-12-31
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4289
dc.source.beginpage1915
dc.source.endpage1919
dc.source.issue5
dc.source.journalJournal of the Electrochemical Society
dc.source.volume147
dc.title

Evaluation of time-of-flight secondary ion mass spectrometry for metal contamination monitoring on Si wafer surfaces

dc.typeJournal article
dspace.entity.typePublication
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