Publication:

Heterogeneous nano-electronic devices enabled by monolithic integration of IIIV, Ge, and Si to expand future CMOS functionality

Date

2014
Proceedings Paper
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dc.contributor.authorThean, Aaron
dc.contributor.authorCollaert, Nadine
dc.contributor.authorWaldron, Niamh
dc.contributor.authorMerckling, Clement
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorLoo, Roger
dc.contributor.authorMitard, Jerome
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorVerhulst, Anne
dc.contributor.authorVeloso, Anabela
dc.contributor.authorPourghaderi, Mohammad Ali
dc.contributor.authorEneman, Geert
dc.contributor.authorYakimets, Dmitry
dc.contributor.authorHuynh Bao, Trong
dc.contributor.authorGarcia Bardon, Marie
dc.contributor.authorRyckaert, Julien
dc.contributor.authorDehan, Morin
dc.contributor.authorWambacq, Piet
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorYakimets, Dmitry
dc.contributor.imecauthorGarcia Bardon, Marie
dc.contributor.imecauthorRyckaert, Julien
dc.contributor.imecauthorWambacq, Piet
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecWambacq, Piet::0000-0003-4388-7257
dc.date.accessioned2021-10-22T06:32:30Z
dc.date.available2021-10-22T06:32:30Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24612
dc.identifier.urlhttp://www.nsti.org/procs/Nanotech2014v3/1/T8.135
dc.source.beginpage588
dc.source.conferenceNanotech: Advanced Materials and Applications
dc.source.conferencedate15/06/2014
dc.source.conferencelocationWashington DC USA
dc.source.endpage591
dc.title

Heterogeneous nano-electronic devices enabled by monolithic integration of IIIV, Ge, and Si to expand future CMOS functionality

dc.typeProceedings paper
dspace.entity.typePublication
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