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Removal of Si-O, Si-C and Si-F by hydrogen bake after reactive ion etching on the silicon surface
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Removal of Si-O, Si-C and Si-F by hydrogen bake after reactive ion etching on the silicon surface
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Date
1998
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kim, Young-Chang
;
Caymax, Matty
;
Bender, Hugo
;
Vanhaelemeersch, Serge
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1932
since deposited on 2021-09-30
Acq. date: 2025-12-09
Citations
Metrics
Views
1932
since deposited on 2021-09-30
Acq. date: 2025-12-09
Citations