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Effective work-function modulation by aluminum-ion implantation for metal-gate technology (poly-Si/TiN/SiO2)

Date

2007
Journal article
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dc.contributor.authorSinganamalla, Raghunath
dc.contributor.authorYu, HongYu
dc.contributor.authorVan Daele, Benny
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.accessioned2021-10-16T19:50:19Z
dc.date.available2021-10-16T19:50:19Z
dc.date.embargo9999-12-31
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12917
dc.source.beginpage1089
dc.source.endpage1091
dc.source.issue12
dc.source.journalIEEE Electron Device Letters
dc.source.volume28
dc.title

Effective work-function modulation by aluminum-ion implantation for metal-gate technology (poly-Si/TiN/SiO2)

dc.typeJournal article
dspace.entity.typePublication
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