Publication:

Selective epitaxial deposition of strained silicon: a simple and effective method for fabricating high performance MOSFET devices

Date

2004
Journal article
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dc.contributor.authorDelhougne, Romain
dc.contributor.authorEneman, Geert
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorMeunier-Beillard, Philippe
dc.contributor.authorVerheyen, Peter
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-15T13:12:07Z
dc.date.available2021-10-15T13:12:07Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8830
dc.source.beginpage1307
dc.source.endpage1316
dc.source.issue8
dc.source.journalSolid State Electronics
dc.source.volume48
dc.title

Selective epitaxial deposition of strained silicon: a simple and effective method for fabricating high performance MOSFET devices

dc.typeJournal article
dspace.entity.typePublication
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