Publication:

Development of a-Si/c-Si heterojunctions for the i2-module concept: low-temperature passivation and emitter formation on wafers bonded to glass

Date

2013-06
Journal article
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dc.contributor.authorGovaerts, Jonathan
dc.contributor.authorGranata, Stefano
dc.contributor.authorBearda, Twan
dc.contributor.authorDross, Frederic
dc.contributor.authorBoulord, Caroline
dc.contributor.authorBeaucarne, Guy
dc.contributor.authorKorsos, Ferenc
dc.contributor.authorBaert, Kris
dc.contributor.authorGordon, Ivan
dc.contributor.authorPoortmans, Jef
dc.contributor.imecauthorGovaerts, Jonathan
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecGovaerts, Jonathan::0000-0002-8908-1198
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.accessioned2021-10-21T07:57:38Z
dc.date.available2021-10-21T07:57:38Z
dc.date.issued2013-06
dc.identifier.issn0927-0248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22421
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0927024813000445
dc.source.beginpage52
dc.source.endpage60
dc.source.journalSolar Energy Materials and Solar Cells
dc.source.volume113
dc.title

Development of a-Si/c-Si heterojunctions for the i2-module concept: low-temperature passivation and emitter formation on wafers bonded to glass

dc.typeJournal article
dspace.entity.typePublication
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