Publication:

Effects of artificial stacking configurations and biaxial strain on the structural, electronic and transport properties of bilayer GaSe- A first principle study

 
dc.contributor.authorPalepu, Joshna
dc.contributor.authorTiwari, Aditya
dc.contributor.authorSahatiya, Parikshit
dc.contributor.authorKundu, Souvik
dc.contributor.authorKanungo, Sayan
dc.contributor.imecauthorKundu, Souvik
dc.contributor.orcidextKanungo, Sayan::0000-0001-7500-6982
dc.date.accessioned2022-04-05T10:04:06Z
dc.date.available2021-11-02T15:56:02Z
dc.date.available2022-04-05T10:04:06Z
dc.date.issued2022
dc.description.wosFundingTextJoshna Palepu is thankful to UGC (Government of India) for PhD fellowship support through NET JRF. The work is supported by the Start-up Research Grant (SRG) by DST-SERB (Grant No. SRG/2020/000547) awarded to Sayan Kanungo.
dc.identifier.doi10.1016/j.mssp.2021.106236
dc.identifier.issn1369-8001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37485
dc.publisherELSEVIER SCI LTD
dc.source.issuena
dc.source.journalMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
dc.source.numberofpages12
dc.source.volume137
dc.subject.keywordsBEHAVIOR
dc.title

Effects of artificial stacking configurations and biaxial strain on the structural, electronic and transport properties of bilayer GaSe- A first principle study

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections: