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Articles
Wear-out of ultra-thin gate oxides during high-field electron tunnelling
Publication:
Wear-out of ultra-thin gate oxides during high-field electron tunnelling
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Date
1995
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Depas, Michel
;
Vermeire, Bert
;
Mertens, Paul
;
Meuris, Marc
;
Heyns, Marc
Journal
Semiconductor Science and Technology
Abstract
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2051
since deposited on 2021-09-29
Acq. date: 2026-01-08
Citations
Metrics
Views
2051
since deposited on 2021-09-29
Acq. date: 2026-01-08
Citations