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Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 and Ge/Ge0.93Sn0.07 hetero-junction tunnel FETs for low voltage logic
Publication:
Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 and Ge/Ge0.93Sn0.07 hetero-junction tunnel FETs for low voltage logic
Date
2016-12
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Pandey, R
;
Schulte-Braucks, Christian
;
Sajjad, R.N.
;
Barth, M.
;
Ghosh, R
;
Grisafe, B.
;
Sharma, P.
;
von den Driesch, Niels
;
Vohra, Anurag
;
Rayner, R.
;
Loo, Roger
;
Mantl, Siegfried
;
Buca, Dan
;
Yeh, C.C.
;
Wu, C-H.
;
Tsai, Wilman
;
Antoniadis, A.
;
Datta, Suman
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1910
since deposited on 2021-10-23
Acq. date: 2025-10-23
Citations
Metrics
Views
1910
since deposited on 2021-10-23
Acq. date: 2025-10-23
Citations