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Influence of growth parameters on Mg doping of GaN by molecular beam epitaxy

Date

2010
Presentation
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dc.contributor.authorLieten, Ruben
dc.contributor.authorMotsnyi, Vasyl
dc.contributor.authorZhang, Liyang
dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorDegroote, Stefan
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorMotsnyi, Vasyl
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecMotsnyi, Vasyl::0000-0001-5297-9298
dc.date.accessioned2021-10-18T18:18:32Z
dc.date.available2021-10-18T18:18:32Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17495
dc.source.conferenceMRS Spring Meeting Symposium EE: Defects in Inorganic Photovoltaic Materials
dc.source.conferencedate5/04/2010
dc.source.conferencelocationSan Francisco, CA USA
dc.title

Influence of growth parameters on Mg doping of GaN by molecular beam epitaxy

dc.typeOral presentation
dspace.entity.typePublication
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