Publication:

Electrical TCAD simulation of a germanium pMOSFET technology

Date

2010
Journal article
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dc.contributor.authorHellings, Geert
dc.contributor.authorEneman, Geert
dc.contributor.authorKrom, Raymond
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorMitard, Jerome
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorMeuris, Marc
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-18T16:59:12Z
dc.date.available2021-10-18T16:59:12Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17244
dc.source.beginpage2539
dc.source.endpage2546
dc.source.issue10
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume57
dc.title

Electrical TCAD simulation of a germanium pMOSFET technology

dc.typeJournal article
dspace.entity.typePublication
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