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Design and optical characterization of novel InGaN/GaN multiple quantum wells structures by metal organic vapor phase epitaxy

Date

2012
Presentation
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dc.contributor.authorZhang, Liyang
dc.contributor.authorCheng, Kai
dc.contributor.authorLiang, Hu
dc.contributor.authorLieten, Ruben
dc.contributor.authorLatkowska, Magdalena
dc.contributor.authorBaranowski, Michal
dc.contributor.authorKudrawiec, Robert
dc.contributor.authorMisiewicz, Jan
dc.contributor.authorDekoster, Johan
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-20T19:36:12Z
dc.date.available2021-10-20T19:36:12Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21920
dc.source.conferenceInternational Workshop on Nitride Semiconductors - IWN
dc.source.conferencedate14/10/2012
dc.source.conferencelocationSapporo Japan
dc.title

Design and optical characterization of novel InGaN/GaN multiple quantum wells structures by metal organic vapor phase epitaxy

dc.typeOral presentation
dspace.entity.typePublication
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