Publication:

In-situ investigation of the impact of externally applied vertical stress on III-V bipolar transistor

Date

2018
Proceedings Paper
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dc.contributor.authorLiu, Yefan
dc.contributor.authorHiblot, Gaspard
dc.contributor.authorGonzalez, Mario
dc.contributor.authorVanstreels, Kris
dc.contributor.authorVelenis, Dimitrios
dc.contributor.authorBadaroglu, Mustafa
dc.contributor.authorVan der Plas, Geert
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.imecauthorLiu, Yefan
dc.contributor.imecauthorHiblot, Gaspard
dc.contributor.imecauthorGonzalez, Mario
dc.contributor.imecauthorVanstreels, Kris
dc.contributor.imecauthorVelenis, Dimitrios
dc.contributor.imecauthorBadaroglu, Mustafa
dc.contributor.imecauthorVan der Plas, Geert
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.orcidimecHiblot, Gaspard::0000-0002-3869-965X
dc.contributor.orcidimecVanstreels, Kris::0000-0002-4420-0966
dc.contributor.orcidimecVan der Plas, Geert::0000-0002-4975-6672
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.date.accessioned2021-10-25T22:18:55Z
dc.date.available2021-10-25T22:18:55Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31212
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8614573
dc.source.beginpage408
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate1/12/2018
dc.source.conferencelocationSan Francisco USA
dc.source.endpage411
dc.title

In-situ investigation of the impact of externally applied vertical stress on III-V bipolar transistor

dc.typeProceedings paper
dspace.entity.typePublication
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