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A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments

Date

1999
Journal article
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dc.contributor.authorVanalme, G. M.
dc.contributor.authorGoubert, L.
dc.contributor.authorVan Meirhaeghe, R. L.
dc.contributor.authorCardon, F.
dc.contributor.authorVan Daele, Peter
dc.contributor.imecauthorVan Daele, Peter
dc.contributor.orcidimecVan Daele, Peter::0000-0003-0557-7741
dc.date.accessioned2021-10-14T11:48:54Z
dc.date.available2021-10-14T11:48:54Z
dc.date.embargo9999-12-31
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3943
dc.source.beginpage871
dc.source.endpage877
dc.source.issue9
dc.source.journalSemiconductor Science and Technology
dc.source.volume14
dc.title

A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments

dc.typeJournal article
dspace.entity.typePublication
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